d a t a sh eet file under discrete semiconductors, sc08b 1996 feb 12 discrete semiconductors line-ups rf power transistors for uhf
1996 feb 12 2 philips semiconductors rf power transistors for uhf line-ups introduction in this section, we present information on recommended circuit line-ups in the main rf power application areas. a comprehensive range of output power levels is indicated, together with our recommended types in the particular line-up configuration. the necessary drive power level for each line-up is indicated in the first column. more detailed application information can be found in the application reports book bipolar and mos transmitting transistors . am aircraft transmitters (100 to 400 mhz) bipolar powermos note 1. v ds = 12.5 v. portable and mobile transmitters (400 to 512 mhz) bipolar input power (mw) 1 st stage 2 nd stage 3 rd stage p l(carr) (w) v ce (v) s = stud f = ?ange 40 blw89 2 blw90 2 blx94c 40 28 s 60 blw89 2 blw91 2 blu60/28 60 28 s/f 500 blw90 2 blx94c 2 blu60/28 120 28 s/f input power (mw) 1 st stage 2 nd stage 3 rd stage p l(carr) (w) v ce (v) 30 blf521 (1) blf522 (1) blf545 40 28 25 blf521 (1) blf543 blf546 80 28 30 blf521 (1) blf543 blf547 100 28 100 blf521 (1) blf544 blf548 150 28 input power (mw) 1 st stage 2 nd stage 3 rd stage p l (w) v ce (v) 45 blv90 blu99 3 7.5 15 bfr96s blu99 blw81 10 13 400 blu99 blu20/12 20 280 blu99 blu20/12 blu45/12 45 13 400 blu99 blu20/12 blu60/12 60 13
1996 feb 12 3 philips semiconductors rf power transistors for uhf line-ups powermos base stations (400 to 470 mhz) bipolar powermos note 1. v ds = 12.5 v. analog cellular (900 mhz) bipolar input power (mw) 1 st stage 2 nd stage 3 rd stage p l (w) v ce (v) 50 blf521 blf522 5 12.5 input power (mw) 1 st stage 2 nd stage 3 rd stage p l (w) v ce (v) 40 blw89 blw91 blx94c 30 28 220 blw90 blx94c blu60/28 60 28 input power (mw) 1 st stage 2 nd stage 3 rd stage p l (w) v ce (v) 35 blf521 (1) blf522 (1) blf545 40 28 40 blf521 (1) blf543 blf546 80 28 150 blf521 (1) blf544 blf548 150 28 45 blf521 (1) blf544 blf547 100 28 input power (mw) 1 st stage 2 nd stage 3 rd stage p l (w) v ce (v) 10 bfg10w/x blt71/8 1.2 4.8 1 bfg540/x blt80 blt81 1.2 6 1 bfg540/x blt70 blt71 1.2 4.8 1 bfg520w/x bfg10w/x blt61 1.2 3.6
1996 feb 12 4 philips semiconductors rf power transistors for uhf line-ups digital cellular (900 mhz) bipolar note 1. pulsed. portable transmitters (860 to 960 mhz)) bipolar mobile transmitters (860 to 960 mhz) bipolar input power (mw) 1 st stage 2 nd stage 3 rd stage p l (w) v ce (v) 1 bfg540w/x bfg10w/x blt72 3 (1) 4.8 1 bfg540w/x bfg10w/x blt62 3 3.6 1 bfg540w/x bfg10w/x blt82 3.5 (1) 6 input power (mw) 1 st stage 2 nd stage 3 rd stage p l (w) v ce (v) 1 bfg540 blt80 blt81 1.2 6 15 bfg91a blt80 blt92/sl 3 7.5 input power (mw) 1 st stage 2 nd stage 3 rd stage 4 th stage p l (w) v ce (v) s = stud f = ?ange 110 blu86 blv91/sl blv93 8 13 s/f 100 blv90 blv92 blv94 15 13 s/f 100 blu86 blv91/sl blv93 blv95 22 13 s/f
1996 feb 12 5 philips semiconductors rf power transistors for uhf line-ups base stations (860 to 960 mhz) class ab operation bipolar notes 1. blv904 is a comparable transistor in a smd package. 2. blv902 is a comparable transistor in a smd package. 3. blv909 is a comparable transistor in a smd package. 4. d im = - 30 db. input power (mw) 1 st stage 2 nd stage 3 rd stage 4 th stage p l (w) v ce (v) f (mhz) 270 blv103 (1) blv934 30 26 960 220 blv103 (1) blv935 30 26 960 65 blv99/sl (2) blv910 blv946 40 26 960 64 blv99/sl blv100 (3) blv101a 45 25 900 100 blv99/sl blv100 (3) blv101b 45 25 960 25 bgy916 blv958 75 26 960 75 blv103 (1) blv920 blv958 75 26 960 75 blv103 (1) blv920 2 blv946 80 26 960 25 blv99/sl blv103 blv98ce 2 blv101a 85 25 900 30 blv99/sl blv103 blv97ce 2 blv101b 85 25 960 35 blv99/sl blv103 blv945a blv950 120 25 900 20 blv99/sl blv103 blv945a blv950 150 (pep) 25 900 (4) 250 blv103 (1) blv934 blv950 150 26 960
1996 feb 12 6 philips semiconductors rf power transistors for uhf line-ups digital cellular (1800 mhz) bipolar base stations (1800 to 1900 mhz) bipolar base stations (1900 to 2000 mhz) bipolar base stations (1800 to 2000 mhz) class ab operation bipolar note 1. in a sot409 smd package. input power (mw) 1 st stage 2 nd stage 3 rd stage p l (w) v ce (v) 2 bfg540w/x bfg10w/x blt14 1.6 4.8 1 bfg540w/x bfg10w/x blt13 2 6 1 st stage 2 nd stage 3 rd stage 4 th stage p l (w) v ce (v) lle18010x lle18040x lle18150x 15 24 lle18010x lle18040x lle18150x 2 lle18300x 50 24 bgy1916 lfe20500x 50 26 lle18010x lle18040x lle18150x 2 lxe18400x 75 24 lle18010x lle18040x lle18300x 2 lfe20500x 90 24 1 st stage 2 nd stage 3 rd stage 4 th stage p l (w) v ce (v) lle18010x lle18040x lle18150x 15 24 lle18010x lle18040x lle18150x 2 lle18300x 50 24 bgy1816 lfe18500x 50 26 lle18010x lle18040x lle18150x 2 lxe18400x 75 24 lle18010x lle18040x lle18300x 2 lfe18500x 90 24 input power (mw) 1 st stage 2 nd stage 3 rd stage p l (w) v ce (v) 25 bgy1816; bgy1916 15 26 60 blv2040 (1) blv2042 (1) blv2044 15 26 120 blv2040 (1) blv2044 blv2045 25 26 250 blv2042 (1) blv2044 2 blv2045 50 26
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